Quantifying and Predicting the Influence of Execution Platform on Software Component Performance

The performance of software components depends on several factors, including the execution platform on which the software components run. To simplify cross-platform performance prediction in relocation and sizing scenarios, a novel approach is introduced in this thesis which separates the application performance profile from the platform performance profile. The approach is evaluated using transparent instrumentation of Java applications and with automated benchmarks for Java Virtual Machines

Alternating sign matrices and domino tilings

We introduce a family of planar regions, called Aztec diamonds, and study the ways in which these regions can be tiled by dominoes. Our main result is a generating function that not only gives the number of domino tilings of the Aztec diamond of order $n$ but also provides information about the orientation of the dominoes (vertical versus horizontal) and the accessibility of one tiling from another by means of local modifications. Several proofs of the formula are given. The problem turns out to have connections with the alternating sign matrices of Mills, Robbins, and Rumsey, as well as the square ice model studied by Lieb

Quantifying and Predicting the Influence of Execution Platform on Software Component Performance

The performance of software components depends on several factors, including the execution platform on which the software components run. To simplify cross-platform performance prediction in relocation and sizing scenarios, a novel approach is introduced in this thesis which separates the application performance profile from the platform performance profile. The approach is evaluated using transparent instrumentation of Java applications and with automated benchmarks for Java Virtual Machines

Role of oxygen vacancy defect states in the n-type conduction of β-Ga[sub 2]O[sub 3]

Based on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were calculated. Using the calculated donor level positions of the vacancies, the high temperature n-type conduction is explained. The vacancy concentration is obtained by fitting to the experimental resistivity and electron mobility